Перегляд за автором "Vakhnyak, N.D."

Сортувати за: Порядок: Результатів:

  • Brus, V.V.; Kovalyuk, Z.D.; Parfenyuk, O.A.; Vakhnyak, N.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The envelope method was used to determine optical constants of TiO₂ thin films deposited by DC reactive magnetron sputtering and electron-beam evaporation techniques. The density and thickness of the thin films were ...
  • Ilashchuk, М.I.; Parfenyuk, O.A.; Ulyanytskiy, K.S.; Brus, V.V.; Vakhnyak, N.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Spectra of transmission and low-temperature photoluminescence of CdTe:Cr crystals have been investigated for concentrations of the doping impurity (Cr) from 1∙10¹⁷ to 4∙10¹⁹ cm⁻³ in the melt. We have found additional ...
  • Vakhnyak, N.D.; Krylyuk, S.G.; Kryuchenko, Yu.V.; Kupchak, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Photoluminescence properties of high-resistivity CdTe:Cl crystals irradiated with g-rays have been studied. An enhancement of near-edge luminescence intensity is observed after a low dose g-irradiation (D < 10 kGy). For ...
  • Parfenyuk, O.A.; Ilashchuk, M.I.; Chupyra, S.M.; Burachek, V.R.; Korbutyak, D.V.; Krylyuk, S.G.; Vakhnyak, N.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Influence of low-temperature annealing on electrical and luminescent properties of semi-insulating n-CdTe:Sn is studied. It is shown that annealing at T ≥ 453 K modifies a near-surface layer of the crystals and this enhances ...
  • Kapush, O.; Budzulyak, S.I.; Korbutyak, D.V.; Vakhnyak, N.D.; Boruk, S.D.; Dzhagan, V.M.; Yemets, A.I.; Valakh, M.Ya. (Functional Materials, 2019)
    Surface and optical properties of CdTe nanoparticles obtained by grinding (40-150 nm, microcrystals) and colloidal synthesis (1-4 nm, nanocrystals) methods are investigated. It is shown that the most intensive adsorption ...
  • Makhniy, V.P.; Vakhnyak, N.D.; Kinzerska, O.V.; Senko, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The influence of Yb impurity on evolution of luminescent properties of zinc selenide crystals doped with Al in the growth process is discussed. It was ascertained that diffusion of Yb impurity in a closed volume from vapor ...
  • Brus, V.V.; Maryanchuk, P.D.; Parfenyuk, O.A.; Vakhnyak, N.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Photoelectrical properties of n-TiO₂/p-CdTe heterojunction solar cells were investigated under different light conditions, taking into account the presence of series and shunt resistances. The effect of light dependent ...